BC556A,112 datasheet

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• Маркировка
  BC556A,112
• Производитель
  NXP Semiconductors
• Описание
  NXP Semiconductors BC556A,112 Current - Collector (ic) (max): 100mA Current - Collector Cutoff (max): - Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 2mA, 5V Frequency - Transition: 100MHz Mounting Type: Through Hole Package / Case: TO-92-3 (Standard Body), TO-226 Power - Max: 500mW Series: - Transistor Type: PNP Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA Voltage - Collector Emitter Breakdown (max): 65V Configuration: Single Transistor Polarity: PNP Collector- Base Voltage VCBO: 80 V Collector- Emitter Voltage VCEO Max: 65 V Emitter- Base Voltage VEBO: 5 V Maximum DC Collector Current: 0.1 A Gain Bandwidth Product fT: 100 MHz (Min) DC Collector/Base Gain hfe Min: 125 at 2 mA at 5 V Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Maximum Power Dissipation: 500 mW Minimum Operating Temperature: - 65 C Factory Pack Quantity: 1000 Other Names: 933243610112, BC556A
• Количество страниц
  8 шт.
• Формат
  PDF

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• Размер файла
  67,39 KB

BC556A,112 datasheet скачать

BC556A,112 datasheet